Program

Thursday, 19 November

08:00 – 09:00 Registration and badge collection

Opening Session
(Room SYNGENTA D4-001a)
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09:00 – 09:30 Welcome Address
Pere L. Gilabert and Gabriel Montoro, Conference Chairs.
Francesc Torres, Rector Universitat Politècnica de Catalunya.
Jordi Berenguer, Vice-Rector for Technology Transfer, Innovation and Entrepreneurship at UPC.
Paolo Colantonio, President GAAS Association.
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09:30 – 10:00 Keynote talk: "Power Amplifier Technologies for Radio Base Stations"
Francesc Purroy, Huawei Technologies.
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10:00 – 10:30 Sponsors talks
Rohde & Schwarz.
Keysight Technologies.
Measure IT.

10:30 – 11:10 Coffee Break and Poster Session #1

Technical Session Thu-1: High Efficiecy High Linearity Phased Arrays
Chair: José Carlos Pedro; Co-Chair: José Angel García
(Room SYNGENTA D4-001a)
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11:10 – 11:40 Invited talk: "Spectral Regrowth Has an Angle: A Systems Perspective on Nonlinear Front Ends in Phased Arrays.
Jeff Massman, Analog Devices
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11:40 – 12:00 Analytical Prediction of Reverse Intermodulation Distortion in MIMO Transmitters
Ludwig Gustavsson (Chalmers University of Technology, Sweden); Han Zhou (Tampere University, Finland & Chalmers University of Technology, Sweden); Gregor Lasser (Chalmers University of Technology, Sweden); Rui Hou and David Gustafsson (Ericsson, Sweden); Christian Fager (Chalmers University of Technology, Sweden)
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12:00 – 12:20 Dual-Input Generalized Memory Polynomial Model for RF Power Amplifiers Under Load Modulation
Joel Fernandez, Lauri Anttila and Yurui Wang (Tampere University, Finland); Koen Buisman (Chalmers University of Technology, Sweden); Arne Fischer-Bühner (Nokia Bell Labs, Belgium); Björn Jelonnek (Nokia, Germany); Mikko Valkama (Tampere University, Finland)
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12:20 – 12:40 Power Flexible 10-W K-Band GaN MMIC Power Amplifier for Downlink Satellite Communications
Andrea Biondi (MEC srl, Italy); Alberto Maria Angelotti and Gian Piero Gibiino (University of Bologna, Italy); Francesco Scappaviva (MEC srl, Italy); Corrado Florian (University of Bologna, Italy)
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12:40 – 13:00 GaN MMIC PA with Discrete Load Modulation for Enhanced Back-off Efficiency
Iaroslav Shilinkov, Hossein Zaheri and Gregor Lasser (Chalmers University of Technology, Sweden); Rob Maaskant (CHALMERS, Sweden)

13:00 – 14:20 Lunch Break

Technical Session Thu-2A: Special Session SGAN
Chair: Gian Piero Gibiino; Co-Chair: Jordi Verdú
(Room SYNGENTA D4-001a)
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14:20 – 14:40 Linearity Characterization of Q-Band 100-nm GaN HEMT Technology Using Optimized Multisines and Wideband Active Load-Pull
Alberto Maria Angelotti, Gian Piero Gibiino, Alberto Santarelli and Corrado Florian (University of Bologna, Italy)
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14:40 – 15:00 Experimental Validation of the GH10 GaN Technology Using Multi Power Q Band MMIC Power Amplifiers with QFN Packaging
Iñaki Bernaola Avila (SENER Aeroespacial, Spain); Roger Vilaseca, Montserrat Puertolas, Carles Moreno, Claudia Carreras and David Gala (SENER, Spain); Jordi Verdu (Universitat Autonoma de Barcelona, Spain)
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15:00 – 15:20 Robust UMS-Qualified 0.1um-GaN Technology
Samira Bouzid-Driad (United Monolithic Semiconductors, France); Madel Manfred (United Monolithic Semiconductors, Germany); Jonathan Leroy, Romain Percheux and Valeria Digiacomo-Brunel (United Monolithic Semiconductors, France)
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15:20 – 15:40 New Process Technology Modules for Q-Band GaN RF Devices
Serguei Chevtchenko (Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Germany); Amer Basal (Ferdinand-Braun-Institut (FBH), Germany); Hyun Kyong Cho, Felix Eiche, Christoph Schulze and Olof Bengtsson (Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Germany); Oliver Hilt (FBH, Germany); Anders Lundskog, Jr-Tai Chen and Jui-Che Chang (SWEGAN AB, Sweden)
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15:40 – 16:00 Design of Q and V-Band GaN MMIC Power and Low-Noise Amplifiers Using UMS GH10 TechnologySergio Lopez de Pablo (Universitat Autonoma de Barcelona, Spain); Atilio Tamay (Universitat Autònoma de Barcelona, Spain); Jordi Verdu and Pedro de Paco (Universitat Autonoma de Barcelona, Spain)

Technical Session Thu-2B: Best Student Paper Presentations
Chair: Anna Piacibello; Co-Chair: Luis Nunes
(Room D4-002a)
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14:20 – 14:30 Measurement-Based Extraction of a Cross-Memory Aware Model for Wideband PAs
Bruna Marcondes (University of Aveiro, Portugal); Filipe M Barradas (Instituto de Telecomunicações, Portugal & University of Aveiro, Portugal); Telmo Cunha and Jose Carlos Pedro (University of Aveiro & Institute of Telecommunications, Portugal)
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14:30 – 14:40 Design and Characterisation of a Ku-/K-Band Orthogonal LMBA GaN MMIC Designed for Doherty-like Mode of Operation
Jean-Baptiste Urvoy, Roberto Quaglia and Steve Cripps (Cardiff University, United Kingdom)
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14:40 – 14:50 Comparison of Load Mismatch Resilience of GaAs Power Amplifiers at Ka-Band for SATCOM Application
Samuel Blain-Descormiers and Pierre Medrel (XLIM - University of Limoges, France); Claude Duvanaud (XLIM-SIC, Université de Poitiers, IUT, Angoulême, France); Ricardo Escobar (XLIM - University of Limoges, France); Fabrice Delahaye, Jean-Philippe Fraysse, Julien Ceugnart, Pablo Rochas and Benoit Lefebvre (Thales Alenia Space, France)
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14:50 – 15:00 Kernel Function Construction Neural Network for Digital Predistortion of RF Power Amplifier
Rongzhen Cao, Luqi Yu, Jianfeng Zhai, Peng Chen and Chao Yu (Southeast University, China)
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15:00 – 15:10 Physics-Based Analysis of Trap Dynamics in Fe-Doped GaN Power Amplifiers
Edoardo De Ruvo, Simona Donati Guerrieri and Fabrizio Bonani (Politecnico di Torino, Italy)
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15:10 – 15:20 A 3 - 6 GHz Variable Gain Amplifier in 0.15µm GaAs pHEMT Technology with Wide Gain Control Range
Siavash Mowlavi, Rob Vissers, Zhiyi Liu, Hossein Zaheri, Gregor Lasser and Lars Svensson (Chalmers University of Technology, Sweden)
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15:20 – 15:30 A Digital Three-Cell GaN Class-D/SCPA MMIC with Enhanced Pulse-Area Resolution
Gabriel Ehlert (Friedrich-Alexander-University Erlangen-Nuremberg, Germany); Friedbert van Raay (IAF, Germany); Alexander Deublein, Michael Loose, David Riess, Jan Philipp Wiedemann, Norman Franchi and Georg Fischer (Friedrich-Alexander-Universität Erlangen-Nürnberg, Germany)
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15:30 – 15:40 Optimized Readout of Molecular Spin Superconductor Hybrid Quantum Circuits
Fernando Luis, Darío González, Sebastián Roca-Jerat, Angelo Mottolese and Javier Sesé (CSIC-Universidad de Zaragoza, Spain); Mari Carmen Pallarés (Universidad de Zaragoza, Spain); Anabel Lostao (Universidad de Zaragoza-ARAID, Spain); Marta Mas Torrent (Institut de Ciència de Materials de Barcelona, Italy); Imma Ratera (ICMAB-CSIC, Spain); Nuria Crivillers (CSIC, Spain); Felice Francesco Tafuri (Aalborg University & Keysight Technologies, Spain); Douglas Olney and Blake Danziger (Keysight Technologies Inc., USA); Philip Krantz and Eric T. Holland (Keysight Technologies, USA)
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15:40 – 15:50 Error-and-Distortion-Feedback-Based Transmitter Linearization: Shared-Basis LUT Approach
Marouan Othmani, Lauri Anttila, Matias Turunen and Mikko Valkama (Tampere University, Finland)
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15:50 – 16:00 A Dual-Input Sequential LMBA for FR1 5G NR with Embedded Drivers
Àngela Ciutat Camps (Universitat Politècnica de Catalunya, Spain); Giulia Bartolotti (Politecnico di Torino, Italy); Alicia Carmona López (Universidad Politécnica de Cataluna, Spain); Anna Piacibello and Vittorio Camarchia (Politecnico di Torino, Italy); Kevin Chuang (Analog Devices, USA); Gabriel Montoro and Pere Gilabert (Universitat Politècnica de Catalunya, Spain)


16:00 – 16:40 Coffee Break and Poster Session #2 Best Student Paper Poster

Technical Session Thu-3: MMIC Design
Chair: Paolo Colantonio; Co-Chair: Teresa Martín
(Room SYNGENTA D4-001a)
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16:40 – 17:00 A Highly Efficient 7-15 GHz GaN MMIC Power Amplifier for 6G FR3 Applications
Xiaomeng Zhang (Chalmers University of Technology, Sweden); Han Zhou (Tampere University, Finland & Chalmers University of Technology, Sweden); Gregor Lasser (Chalmers University of Technology, Sweden); Rui Hou (Ericsson, Sweden); Christian Fager (Chalmers University of Technology, Sweden)
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17:00 – 17:20 Experimental Investigation of Complementary Third-Order Nonlinear Biasing for D-Band MMIC Power Amplifiers
Astrid Lando Tchinda, Fabian Thome, Patrick Umbach and Rüdiger Quay (Fraunhofer IAF, Germany)
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17:20 – 17:40 Combined-Doherty MMIC Amplifiers in GaAs HBT Technology for Wi-Fi Applications
Francesco Manni (University of Rome "Tor Vergata", Italy); Chiara Ramella (Politecnico di Torino, Italy); Rocco Giofrè (University of Roma Tor Vergata, Italy); Alberto Maria Angelotti, Corrado Florian and Gian Piero Gibiino (University of Bologna, Italy); Marco Pirola (Politecnico di Torino, Italy); Paolo Colantonio (University of Roma Tor Vergata, Italy)
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17:40 – 18:00 An Efficient and High Power Density 7.2-8.4 GHz FR3 GaN-on-Si MMIC Doherty Power Amplifier with 8-dB Backoff
Abdolhamid Noori (Silicon Austria Labs, Austria & Chalmers University of Technology, Sweden); Wagner Christoph (Silicon Austria Labs (SAL), Austria); Christian Fager and Gregor Lasser (Chalmers University of Technology, Sweden)
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18:00 – 18:20 A 7-11-GHz Two-Stage GaN MMIC Power Amplifier with Multi-Harmonic Impedance Control
Hanchao Chen, Anna Piacibello and Vittorio Camarchia (Politecnico di Torino, Italy)

19:00 Bus departure for dinner from the UPC parking lot

20:00 – 23:00 Gala Dinner

Friday, 20 November

Technical Session Fri-1: Nonlinear Modeling and Characterization
Chair: Christian Fager; Co-Chair: Aleksander Bogusz
(Room SYNGENTA D4-001a)
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08:50 – 09:10 A Device to Circuit Framework Linking GaN HEMT Epitaxial Design to Efficiency in 3 GHz Doherty Power Amplifiers
Shivansh Awasthi and Niklas Rorsman (Chalmers University of Technology, Sweden); Rui Hou (Ericsson, Sweden); Christian Fager (Chalmers University of Technology, Sweden)
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09:10 – 09:30 Predicting Concurrent Dual-Band PA Performance from Two-Tone Characterization
Luis Nunes (Universidade de Aveiro - Instituto de Telecomunicacoes, Portugal); Filipe M Barradas (Instituto de Telecomunicações, Portugal & University of Aveiro, Portugal); Sayedmohammad Daneshvar Farzanegan and Pedro Cabral (Universidade de Aveiro, Portugal); Jose Pedro (University of Aveiro & Institute of Telecommunications, Portugal)
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09:30 – 09:50 Behavioral Modeling of RF Power Amplifiers Based on Pulsed Time-Domain Measurements
Jean Ortali (Universitée de Limoges, France); Sébastien Mons and Tibault Reveyrand (XLIM, France); Edouard Ngoya (Xlim Laboratory - University Limoges, France); Arnaud Delias and Maxime Faure (Dassault Systèmes, France)
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09:50 – 10:10 A Hybrid Behavioural Modelling Framework for mm-Wave GaAs pHEMTs Combining Equivalent-Circuit and ANN
Carminati Leonardo (University of Milan - Bicocca, Italy); Gianni Bosi (University of Milan Bicocca, Italy); Antonio Mordà (University of Milano-Bicocca, Italy); Negar Choupan (University of Milano- Bicocca, Italy); Ciro Esposito and Federico D'Aniello (University of Milano-Bicocca, Italy); Giovanni Crupi (University of Messina, Italy); Valeria Vadalà (University of Milano-Bicocca, Italy)
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10:10 – 10:30 A Two-Tone-Extracted PA Behavioral Model with Delta-F-Blind Carrier-Power State for Fast Modulated-Signal Prediction
Christophe Quindroit, Kaisseh Houssein and Fabien Leroy (AMPLEON, France)

10:30 – 11:10 Coffee Break and Poster Session #3

Technical Session Fri-2: Advanced Architectures for Linearity and Power-Efficiency Enhancement
Chair: Gregor Lasser; Co-Chair: Sébastien Mons
(Room SYNGENTA D4-001a)
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11:10 – 11:40 Invited talk: "Energy-Efficient RF Frontend System for Handset Applications"
Wantao Li, Huawei.
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11:40 – 12:00 A 200 MHz Two Level Switching Supply Modulator MMIC on 100 nm GaN-on-Si for Average Power Tracking Applications
Mohammad Moussa (University of Limoges, France); Anthony Disserand (CRT Cisteme, France); Gobezie Nigussie Molla and Meseret Wolde (University of Limoges, France); Jean-Christophe Nallatamby, Florent Gaillard, Philippe Bouysse and Audrey Martin (XLIM, France)
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12:00 – 12:20 Design Methodology for Nonlinear Load Synthesis in Reflective Analog Predistortion Circuits
Inês Pinto (Universidade de Aveiro, Portugal); Jiayang Yu (Instituto de Telecomunicações, Portugal); Luis Nunes (Universidade de Aveiro - Instituto de Telecomunicacoes, Portugal); Filipe M Barradas (Instituto de Telecomunicações, Portugal & University of Aveiro, Portugal); Telmo Cunha and Jose Pedro (University of Aveiro & Institute of Telecommunications, Portugal)
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12:20 – 12:40 Characterization and Linearization of a Wideband Variable Envelope Outphasing Transmitter
Kingsley Momor, Bilal Khan, Marko E Leinonen and Aarno Pärssinen (University of Oulu, Finland); Nuutti Tervo (University of Oulu, 6G Flagship, Finland)
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12:40 – 13:00 Output Matching Network Design for Load-Modulated Power Amplifiers
Taylor Barton (University of Colorado, Boulder, USA)

13:30 – 14:20 Lunch Break

Technical Session Fri-3: PA Behavioral Modeling and Linearization
Chair: Vittorio Camarchia ; Co-Chair: Roberto Quaglia
(Room SYNGENTA D4-001a)
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14:20 – 14:40 A Temperature-Dependent Extension of the TwoPath Memory Digital Predistortion Model
Léo Giosa (University of Limoges, France); Tibault Reveyrand and Sebastien Mons (XLIM, France); Edouard Ngoya (Xlim Laboratory - University Limoges, France)
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14:40 – 15:00 A Phase-Normalized I/Q Generalized Memory Polynomial for RF Power Amplifier Modeling
Sergi Muñoz (University of Seville, Spain); Juan A. Becerra, Elías Marqués-Valderrama and Maria J. Madero-Ayora (Universidad de Sevilla, Spain)
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15:00 – 15:20 Improving RF Power Amplifier Linearizability by Envelope Distortion Cancellation
Thales Stedile-Ribeiro (Friedrich-Alexander University, Germany & Nokia Mobile Networks, Germany); Björn Jelonnek and Tilman Felgentreff (Nokia, Germany); Georg Fischer (Friedrich-Alexander-Universität Erlangen-Nürnberg, Germany)
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15:20 – 15:40 Time-Domain Spiking Neural Network-Based Digital Predistortion for Power Amplifiers Linearization
Xinya Ma (Sorbonne Université, France); Siqi Wang (Sorbonne University, France); Minghan Liu (Sorbonne University, France & GeePs, CentraleSupélec, University Paris-Saclay, France); Haralampos-G. Stratigopoulos (Sorbonne Université, CNRS, LIP6, France); Aziz Benlarbi-Delaï (Sorbonne University, Paris, France)
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15:40 – 16:00 Adaptive Digital PreDistortion Based on Direct Learning Architecture for Satellite Communication in Ka-Band
Antoine Sanchez (University of Limoges, France); Smail Bachir (University de Poitiers, France); Sebastien Mons and Tibault Reveyrand (XLIM, France); Mouayd Hoari and Guillaume Gastebois (SAFRAN DATA SYSTEMS, France)

16:00 – 16:40 Coffee Break and Poster Session #4

Closing Session
(Room SYNGENTA D4-001a)
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16:40 – 17:10 Keynote talk: "Pushing to Nature’s Limit: Energy in Wireless Links"
Joel L. Dawson, Talking Heads Wireless.
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17:10 – 18:00 Awards and Final Remarks

19:30 – 22:00 Young Professionals Social Event

Poster Session Thu-P1

Chair: Steve Mass; Co-Chair: María José Madero

A 29.5-dBm E-Band Balanced GaAs MMIC Power Amplifier with Broadband Port Matching for Potential Supply Modulation Application
Zhiyi Liu (Chalmers University of Technology, Sweden); Göksu Kaval (Chalmers University of Technology, Sweden & Gotmic AB, Sweden); Gregor Lasser (Chalmers University of Technology, Sweden)

Inverse Design of Wideband Dual-RF Input Power Amplifiers Using a Pixelated Combiner Approach
David Widén and Christian Fager (Chalmers University of Technology, Sweden)

A Q-Band Three-Stage GaN MMIC Doherty Power Amplifier for Space Applications
Elodie Richard (ESA, The Netherlands); Natanael Ayllon (ESA/ESTEC, The Netherlands); Václav Valenta (European Space Agency, The Netherlands); Hugo Deberge (European Space Agency (ESA), The Netherlands); Felix Mentgen (European Space Agency, The Netherlands); Philipp Neininger, Thomas Maier and Stephan Ockenfuß (Fraunhofer IAF, Germany)

Back-off Range Reconfigurable Doherty Power Amplifier on a GaN-on-Si Process at 6G FR3
Hossein Zaheri and Gregor Lasser (Chalmers University of Technology, Sweden)

A Q-Band MMIC Power Amplifier in 100-nm GaN-on-SiC Technology for SatCom
Corrado Florian, Alberto Maria Angelotti, Gian Piero Gibiino and Alberto Santarelli (University of Bologna, Italy)

25-30 GHz Broadband GaN Doherty Amplifier with Enhanced Carrier Output Matching Network
Francesco Manni, Paolo Colantonio and Rocco Giofrè (University of Roma Tor Vergata, Italy)

A Passive Reactive Bias Tee for Low-Frequency S-Parameter Characterization of III-V Transistors
Gianni Bosi (University of Milan Bicocca, Italy); Antonio Raffo and Francesco Trevisan (University of Ferrara, Italy); Federico D'Aniello and Valeria Vadalà (University of Milano-Bicocca, Italy); Giorgio Vannini (University of Ferrara, Italy)

A V-Band GaAs MMIC Self-Synchronous Rectifier with Drain-to-Gate Feedback for WPT
Marco Badii, Giovanni Lasagni, Monica Righini, Stefano Maddio, Giovanni Collodi and Alessandro Cidronali (University of Florence, Italy)

Poster Session Fri-P3

Chair: Steve Mass; Co-Chair: María José Madero

On the Trade-off Between Tuning Range and RF Performance in Junction and Accumulation-Mode MOS Varactors for Oscillator Design
Matteo Elviretti, Holger Rucker and Christian Wipf (IHP, Germany); Gerhard Kahmen (IHP Leibniz Institut für Innovative Mikroelektronik, Germany)

Comparison of Linearity in Two GaN HEMT Variants Using Ka-Band Two-Tone Load-Pull Measurements and a Simplified Transfer Function Modelling
Ehsan Merhabi Azad (Catapult, United Kingdom (Great Britain)); Sam Pascoe (Leonardo, United Kingdom (Great Britain)); Alex Pitt (Compound Semiconductor Applications Catapult Limited, United Kingdom (Great Britain)); Kauser Chaudhry (Catapult, United Kingdom (Great Britain)); Roberto Quaglia (Cardiff University, United Kingdom (Great Britain))

Experimental Study of Varactor-Tunable Matching in Microwave GaN MMIC Power Amplifiers
Simone Cangini, Alberto Maria Angelotti and Gian Piero Gibiino (University of Bologna, Italy); Olof Bengtsson (Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Germany); Corrado Florian and Alberto Santarelli (University of Bologna, Italy)

Large Signal Modelling of a Varactor Diode in 120 nm GaN HEMT Technology
Sabrina Rahman, Aleksander Bogusz, Paul J Tasker and Roberto Quaglia (Cardiff University, United Kingdom (Great Britain))

Joint Drain and Gate Bias Control for Efficiency-Linearity Optimization in TDM-Based ISAC Envelope Tracking PAs
Amirmohammad Shahghasi (Universitat Politècnica de Catalunya-Barcelona Tech (UPC), Spain); Gabriel Montoro and Pere Gilabert (Universitat Politècnica de Catalunya, Spain)

Nonlinear Feedback in Josephson Circuit Optimization: Application to a Kerr-Reversal JTWPA
Emanuele Palumbo, Alessandro Alocco and Andrea Celotto (Politecnico di Torino, Italy); Luca Fasolo (Istituto Nazionale di Ricerca Metrologica, Italy); Bernardo Galvano (Università di Palermo, Italy); Patrizia Livreri (University of Palermo, Italy); Emanuele Enrico (Istituto Nazionale di Ricerca Metrologica, Italy)

A Design Methodology for Concurrent Dual-Band Class-J Doherty Power Amplifiers
Sayedmohammad Daneshvar Farzanegan (Universidade de Aveiro, Portugal); Luis Nunes (Universidade de Aveiro - Instituto de Telecomunicacoes, Portugal); Filipe M Barradas (Instituto de Telecomunicações, Portugal & University of Aveiro, Portugal); Pedro Cabral (Universidade de Aveiro, Portugal); Jose Pedro (University of Aveiro & Institute of Telecommunications, Portugal)

Wideband Class-E Inverter and Synchronous Rectifier Based on a GaAs E-pHEMT Device
Mostapha Ouadefli (Celestia TTI, Spain); Paula Gómez and José A García (Universidad de Cantabria, Spain)

Poster Session Fri-P4

Chair: Steve Mass; Co-Chair: María José Madero

A 500 MHz to 4 GHz Active True Time Delay GaAs MMIC
Muhammad Yaqub Alam Mahsud (University of Colorado at Boulder, USA); Taylor Barton (University of Colorado, Boulder, USA)

A 400 GHz SiGe Push-Push Oscillator with a Monolithically Integrated Patch Antenna
Mehran Khanehbeygi (University of L'Aquila, Italy); Marta Ferreras (Universidad Politécnica de Madrid, Spain); Leonardo Pantoli (University of L'Aquila, Italy); Giorgio Leuzzi (University of L'Aquila, Italy)

Multiple Mixing in Passive Mixers
Timo Rahkonen, Negar Shabanzadeh, Ara Abdulsatar Assim, Rodrigo Llorente Triana and Janne P Aikio (University of Oulu, Finland)

Tunnel Diode-Based Analog Basis-Function Circuits for Nonlinear Function Synthesis
Haoyu Li, Junhan Xie, Jinrong Tang, Jiacheng Peng and Junxiong Liu (Sun Yat-sen University, China); Songyuan Li (Shenzhen University of Advanced Technology, China); Teng Wang and Xiangwei Zhu (Sun Yat-sen University, China)

A Compact Broadband GaN Power Amplifier Using a Filtering-Matching Network
Mohammadamin Kamali (Technische Universität Graz, Austria); Mohammad Mehrabi Gohari (Micro and nano system KTH Royal Institute of Technology, Sweden); Ioannis Peppas (Infineon Technologies Austria AG, Austria); Helmut Paulitsch and Michael Gadringer (Graz University of Technology, Austria); Wolfgang Bosch (Graz University of Technology & Institute of Microwave and Photonic Engineering, Austria)

Impact of Nonlinearities and Memory Effects on Multi-Frequency Microwave Control of Large-Scale Quantum Processors
Marvin Jaeger (Technische Universität Hamburg, Germany); Gian Piero Gibiino (University of Bologna, Italy); Felice Francesco Tafuri (Aalborg University & Keysight Technologies, Spain); Philip Krantz and Eric T. Holland (Keysight Technologies, USA); Alexander Koelpin (Hamburg University of Technology & Chair for Electronics and Sensor Systems, Germany)

An 18-40-GHz GaN Resistive Mixer Front End with 28% LO Tuning Range
Cristian Di Pietro and Sergio Colangeli (University of Rome Tor Vergata, Italy); Patrick Ettore Longhi (University of Roma Tor Vergata, Italy); Walter Ciccognani (Università of Rome Tor Vergata, Italy); Antonio Serino and Ernesto Limiti (University of Rome Tor Vergata, Italy)

Time-Domain Analysis of Recovery Dynamics in a GaN Limiter-LNA-Limiter MMIC Radar Front-End at X-Band
David Espinosa-Adams (Indra Sistemas, Spain); Jose Luis Jimenez-Martin (Universidad Politecnica de Madrid, Spain); Vicente González Posadas (Polytechnic University of Madrid, Spain); Jorge Montero Valor and Eduardo García Lorenzo (Indra Sistemas, Spain); Eduardo Oreja-Gigorro (Indra Sistemas S.A., Spain); Javier Montero de Paz (Indra Sistemas, Spain); Juan José Sánchez-Martínez (Indra Sistemas S.A., Spain)

Impact and Trade-Offs of Gate Length in GaN-on-SiC MMICs for Q-Band High Power Amplifiers
Kimon Vivien (United Monolithic Semiconductor, France); Frédéric Drillet (United Monolithic Semiconductor (UMS), France); Frédéric Vicente and Zineb Ouarch (United Monolithic Semiconductor, France); Samira Bouzid-Driad (United Monolithic Semiconductors, France)