Dr. Mustazar Iqbal

• Principal Engineer at Infineon Technologies Austria AG

Biography

Dr. Mustazar Iqbal holds a Ph.D. in Electronic and Communications Engineering, which he earned from the prestigious Politecnico di Torino in Italy in 2017. The following year, he joined Ericsson AB in Stockholm, Sweden, where he took on the role of RF Engineer. During his tenure, his work played a pivotal role in identifying crucial options for 5G and 6G power amplifiers in Massive MIMO systems within the radio department.

As a Principal Engineer at Infineon Technologies Austria AG in Villach from 2022, he is driving innovation in RF power amplifier design for 5G and 6G systems. His current research endeavors are centered around leading the design, modeling, and predistortion of high-efficiency power amplifiers, with a particular emphasis on module and Monolithic Microwave Integrated Circuit (MMIC) technologies.

Talk title: The second generation of GaN-on-Si HEMT Technology from Infineon Enables Wideband Integrated Doherty Power Amplifier Module for Next-Generation Massive MIMO

Abstract: This talk presents a wideband and highly integrated Doherty power amplifier module, specifically designed for 5G massive MIMO base station transceivers (BTS), and utilizing a cutting-edge GaN-on-Si technology from Infineon. With the 2nd generation of GaN-on-Si technology, we see a significant boost in performance, with a 3-4dB gain increase and 75% drain efficiency at 3.6 GHz, as well as favorable output impedances for wideband matching and design. The module’s output combiner design is characterized by its simplicity and compactness, while also delivering ideal 2nd harmonic termination and demonstrating minimal dispersion over a 600 MHz RF bandwidth. The power amplifier module, which includes on-board bias and control, achieves a high efficiency of 47% and a gain of over 33.0 dB across the 3.4-4.0 GHz frequency band, while delivering an average output power of 8 W under a 100 MHz LTE signal. To comprehensively assess the linearity of the power amplifier, a digital predistortion (DPD) technique is applied on 20 MHz and 100 MHz LTE signals, resulting in excellent linearized performance with adjacent channel leakage ratios (ACLR) of -63.0 dBc and -52.0 dBc, respectively.